Turn-on Condition and Characteristics of High-power Semiconductor Switch RSD

Abstract

RSD (Reversely Switched Dynistor), a high-power semiconductor switch, is similar in design to thyristor with pnpn-regions. Instead of a conventional gate structure, RSD's anode consists of alternating n+ and p+ sections. In this paper, the RSD turn-on condition is systematically investigated. Analyses and simulations reveal that the trigger charge must be sufficient to assure RSD normal turn-on. To explore the potential application of RSD, several turn-on characteristics are experimentally evaluated. Results indicate that RSD has advantages in fast voltage-falling, great capability of handling high current and high di/dt.