Study on structural luminescence characteristics of a new Dy3+ activated white luminescent phosphor

Abstract

A series of Y1-xGa1.5Al1.5(BO3)4: xDy3+ were prepared by a high-temperature solid-phase method. Rietveld refinement characterized the phase purity of the samples obtained, suggesting that the prepared phosphors were high-purity material phases. After synthesizing high purity phase, the luminescence mechanism is revealed, under 348 nm excitation in Y0.97Ga1.5Al1.5(BO3)4: 0.03Dy3+ phosphor, the samples have two characteristic peaks at 480 nm and 572 nm and the burst mechanism is dipole-dipole mechanism. The mechanism of luminescence and quenching is analyzed by analyzing the band structure, and the relationship between the band gap and thermal stability is explained. The prepared phosphor has a quantum efficiency of 51.22 % and exhibits intense white light emission. The thermal stability of the samples was characterized, and the phosphor could still achieve 88.20 % thermal stability at 423 K. Finally, the chromaticity coordinates of the Y1-xGa1.5Al1.5(BO3)4: xDy3+ phosphors all fall in the white-light region, with the color coordinates around (0.33, 0.33). By combining with the 365nm chip and Y0.97Ga1.5Al1.5(BO3)4: 0.03Dy3+ phosphor, the W-led device with Ra=68.3 and CCT=6670 K was synthesized. Therefore, the Y0.97Ga1.5Al1.5(BO3)4: 0.03Dy3+ phosphor prepared in this experiment has some application value in the field of solid-state lighting.