Abstract
Because of its advantages of high temperature, high frequency and high power, GaN high electron-mobility transistor (HEMT) devices have been widely used in microwave circuit design. Successful circuit design requires accurate device models. Therefore, small-signal modeling plays an important role in the design of microwave circuits. According to the theoretical analysis, this paper selects CGH40010F device for small-signal modeling, proposes 16-element small-signal circuit model, uses vector network analyzer (VNA) to measure S parameters under different biases at different frequency points, and uses the distributed extraction method to extract the parasitic parameters and intrinsic parameters of GaN HEMT device. The accuracy of the model was verified by comparing the test results with the simulation results.
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