Abstract
SiC can provide better material properties when the performance of Si - based power devices is almost developed to the limit. But compared with Si material, the reliability of SiC device is poor under ultimate stress. The short circuit capability of SiC MOSFET has been the main area of attention in this papers study. Through the analysis of SiC MOSFET short-circuit capability, it is mainly represented by the time that the device can withstand short-circuit stress and the time it takes for the device to be safely turned off in the event of a short circuit fault. Secondly, the detection circuit and protection circuit under the SiC MOSFET short-circuit fault are briefly studied, and the optimization ideas and working principles are summarized.
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