Abstract
The aim of this study is to analyze the decaying and recovering mechanism of the quantum efficiency for reflection-mode GaN NEA photocathode. One kind of reflection-mode GaN NEA photocathode is designed and grown in the laboratory. The quantum efficiency curves are obtained immediately and six hours later after the sample is fully activated, the quantum efficiency data at different wavelengths are acquired according to the two different quantum efficiency curves, Through the analysis of experiment result, the inner factors resulting in quantum efficiency decaying are discussed. Taking the factors into consideration, the method of supplementing Cs is applied in recovering the quantum efficiency, the quantum efficiency can be partly recovered. The reason that the quantum efficiency can not be completely recorvered is also anylized.
Highlights
With the fast developing of the information technology and detection technology, the ultraviolet detection technology has gradually become an important photoelectric technique both in civil and military fields
In order to further exert the superior quality of The GaN Negative Electron Affinity (NEA) photocathode, it is necessary to study the decaying and the recovering mechanism of the quantum efficiency
Decaying result discussion of quantum efficiency: According to the double dipole layer model which formed by the element Cs and O, the number and direction of the double dipole [GaN(Mg:Cs)] and O-Cs in the activation layer have decisive function to the electronic escaping (Antypas et al, 1970)
Summary
With the fast developing of the information technology and detection technology, the ultraviolet detection technology has gradually become an important photoelectric technique both in civil and military fields. Allen (1971) The GaN NEA photocathode with characteristics such as high quantum efficiency, low dark current, quick response speed and high stability make it the most important component in the ultraviolet detection equipment (Su et al, 1982; Wada et al, 1990; Machuca et al, 2002). It has a very promising application future in the optoelectronic field. In order to further exert the superior quality of The GaN NEA photocathode, it is necessary to study the decaying and the recovering mechanism of the quantum efficiency
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