Abstract
The preparation of multicrystalline silicon ingots with different boron-gallium doping ratio was studied in this work. The resistivity distribution, minority carrier lifetime, photoelectric conversion efficiency and light-induced degradation ratio were analyzed and compared. The results showed that with the increase of gallium doping ratio, the minority carrier lifetime of ingot and the conversion efficiency of silicon wafers were both decreased, at the same time the light-induced degradation ratio was decreased obviously, but it was not proportional to gallium concentration, By comparing the impurities concentration, it was preliminarily inferred that the impurities of copper and iron may also affect the light-induced degradation. Based on the performance of resistivity, conversion efficiency and light-induced degradation, the optimal gallium-doped ratio of multicrystalline ingots was between 20 and 25%.
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