Abstract
A newly designed diffusion barrier (DB) was introduced to industrial silicon ingot casting with various seeding techniques, in order to reduce the height of bottom low lifetime region. The DB was fabricated by alternatively brushing silica and silicon nitride coatings with high purity on the inner bottom of the crucible. The effects of DB on mono-like (ML) and multicrystalline (assisted by chips and slabs) ingots were characterized and compared. The results showed that the DB had much stronger influence in mono-like ingot than in multicrystalline ingots. The related mechanism on ingot bottom lifetime improvement was discussed.
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