Abstract
The photoelectrochemical properties of Cd1-xZnxS (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin film, prepared by Chemical bath deposition technique on simple glass and fluorine doped tin oxide(FTO) coated glass substrate were studied. The X-ray diffraction (XRD) studies indicate that film was hexagonal with polycrystalline in nature. The current-voltage (I-V) curve for PEC cell of configuration n-Cd1-xZnxS//1M polysulphide//C under illumination for film deposited on FTO coated glass substrate, respectively. I-V curve characterizes the semiconductor/electrolyte junction which acts like a diode. The interface shows a rectifying behavior with a cathodic current (direct) much greater than the anodic current (reverse), which is typical of a Schottky junction formed between an n-type semiconducting material and a metal or an electrolyte. Various PEC parameters such as the junction ideality factor under illumination, series and shunt resistances, efficiency and, fill factor have been calculated for the PEC cells formed. The efficiency and fill factor of these PEC cells are found to be increased as increasing X=0.4 and further, it decreases as X increases.
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