Abstract
The photoelectric properties of Al-Eu doped ZnO were explored using first-principles and magnetron sputtering. Different models of Al, Eu and Al-Eu doped ZnO were constructed according to the doping energy, the simulation and experiment show the Al, Eu and Al-Eu, as donor defect, all are conducive to n-ZnO, moreover, Al-Eu codoped ZnO annealed at 500 °C has better film quality such as crystal structure and absorption. The results could provide certain theoretical and experiment reference for studying ZnO-based photoelectronics related to visible and near infrared region.
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