Abstract
Methods for precise formation of tapered ion implanted layers for use as propagation tracks in 4 Mbit magnetic bubble memories were discussed. After forming a mask pattern using multi-layer resist methods, a resist pattern was formed on the propagation line connector, and heat treated. This heat treatment changed the resist cross-section angle ;*; and the pattern lengthening l; their dependences on the heat treatment temperature were determined. Optimum precisions of θ = 48 ± 2.3° and l = 0.43 ± 0.02 μm were obtained at 170°C without ultraviolet exposure.
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