Abstract
The formation of nitrogen-induced defects and the reduction of their concentration after rapid thermal annealing in TlInGaAsN alloy system are studied in detail, employing the photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) studies. XPS analysis revealed that the N-induced defect configurations are most likely attributed to the N–As spilt interstitials and (NAs–AsGa) nearest neighbor pairs. Rapid thermal annealing (RTA) treatment reduces the defect concentration and induces a significant improvement in the PL efficiency of the TlInGaAsN material system.
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