Abstract
Neutron radiation induced soft error rate (SER) of semiconductor devices is still an important issue. Both SOI FinFET and bulk FinFET are simulated to analyze the sensitivity to neutron radiation, including particle transport simulation, device simulation and circuit simulation. The results demonstrate that bulk FinFET can deposit more energy due to larger sensitive volume. And the peak value of current pulse for bulk FinFET is two times greater than that of SOI FinFET. So the bulk FinFET is more sensitive to neutron radiation.
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