Estimating the performance of SOI FinFET transistor using electro-thermal formulation in conjunction with the quasi-ballistic effective electron mobility approach

Abstract

Modeling and simulating FinFET based circuits, disentangled as Physics-based FinFET models, constitute predictive technology models for device and circuit simulations. The electrostatic properties as well as the electron and phonon transport are very responsive to the thermal effects in diffusive as well as in quasi-ballistic regimes suggesting thereby, the necessity of their consideration for effective device modeling and design particularly in nano FinFET devices. In this paper, we describe the calibration of the drift-diffusion (D-D) transport approach for simulating the quasi-ballistic effect in short channel occurring in nanoscale devices. A strong coupling of the calibrated D-D model with the enhanced Ballistic-Diffusive Equation (BDE), susceptive to prescribe the phonon and electron transports is introduced. The Finite Element Method (FEM) is used to produce results by numerical simulation of the electro-thermal model offered in Bulk and SOI FinFET devices. We have found that the proposed mobility model performs quite well and mainly infuences the drain current and the heat source by Joule effect. Our results extracted from the calibrated D-D model are compared and contrasted with those obtained experimentally and with those obtained with the numerically exact configuration. A decent agreement between the proposed model dealing with SOI FinFET as well as Bulk FinFET and the experimental data is obtained. Results obtained by using the enhanced electro-thermal model hold promise for thermal simulations of heat transport in Bulk and SOI FinFET devices, suggesting that the dopant concentration have a crucial role for the increasing of the temperature inside the Bulk/SOI FinFET.