Abstract
The present research work based on the newly prepared organic-inorganic hybrid heterostructure will be exploited to develop a multifunctional device including non-volatile resistance switching memory devices, and ultraviolet (UV) light detection behavior for the first time based on p-PEDOT:PSS/i-BFO/n-ZnO junctions. Using a spray pyrolysis technique, n-type zinc oxide (ZnO) and i-type bismuth ferrite (BiFeO3) thin film layers were prepared on the clean glass substrates at temperature 673 K. Using a spin coater method, the p-PEDOT:PSS were grown upon a bismuth ferrite (BiFeO3) thin film with a constant spin velocity of 2000 rpm and heated at 363 K. The current (I)–voltage (V), photoresponse characteristics and resistive switching (RS) behavior of the fabricated p-PEDOT:PSS/i-BFO/n-ZnO hybrid devices were carried out. The device shows high photoresponsivity (R) of 0.001 285 A W−1 and fast photoresponse switching speed with the measured rise and fall time of 493 and 970 ms respectively. Based on the electrical properties, a conductive filament formation/rupture mechanism is proposed to explain the observed RS characteristics.
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