Abstract
In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
Highlights
Visible light communication, as a communication solution to alleviate the shortage of spectrum resources, is at the frontier of technology and the hotspot of research
The narrow bandwidth of commercial light-emitting diodes (LEDs) chips, which is in the range of 20–30 MHz, limits the overall bandwidth of visible light communication systems [1,2]
The modulation bandwidth of an LED chip is limited by the resistance–capacitance (RC) time constant and carrier spontaneous emission rate [3]
Summary
As a communication solution to alleviate the shortage of spectrum resources, is at the frontier of technology and the hotspot of research. The narrow bandwidth of commercial LED chips, which is in the range of 20–30 MHz, limits the overall bandwidth of visible light communication systems [1,2]. The modulation bandwidth of an LED chip is limited by the resistance–capacitance (RC) time constant and carrier spontaneous emission rate [3].
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