Abstract

This paper proposes a low-voltage, low-cost multiple-time-programmable nonvolatile memory (MTP NVM) based on a standard CMOS 0.13 μm process for UHF RFID chip applications. The design of the differential structure cell using the tunneling effect reduces the read and write voltage. The read and write simulation test results show that the read and write operating voltage is 10 V, which is 30% lower than that of conventional EEPROMs. Because the UHF RFID tag chip requires higher voltage reduction, the structured memory cell is well suited for UHF RFID applications.

Highlights

  • In Ultra High Frequency (UHF) Radio Frequency Identification RFID tag chips, nonvolatile memory (NVM) occupies an important position in the entire UHF RFID tag as the carrier for storing information

  • Reducing the read/write voltage and cost of the NVM will be of great importance to the development of UHF RFID tag chips

  • We propose an multiple-time-programmable nonvolatile memory (MTP NVM) cell based on the standard CMOS process to address the high operating voltage of EEPROM. e cell is a differential structure, which reduces the read and writes voltage

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Summary

Introduction

In Ultra High Frequency (UHF) Radio Frequency Identification RFID tag chips, nonvolatile memory (NVM) occupies an important position in the entire UHF RFID tag as the carrier for storing information. Because NVM needs charge pump to generate high voltage to provide voltage signal to the corresponding location of the storage unit when writing, reducing voltage becomes extremely important for NVM of UHF tags. Reducing the read/write voltage and cost of the NVM will be of great importance to the development of UHF RFID tag chips. 2. System Architecture and Storage Units e basic composition of the tag chip is shown, which includes the Radio Frequency (RF) analog front-end, digital baseband, and memory three parts [1]; the main role of each part in the entire tag chip is as follows. E digital baseband parses the commands transmitted by the analog front-end, responds to the commands according to the corresponding protocol, decodes the baseband signals and stores the information data in the memory. Under the command and coordination of the built-in controller, the row decoder and row driver work together to allow the system to select a row Scientific Programming

D RF Front End
Floating Grid State Analysis
Findings
Conclusions
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