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Abstract
AbstractEpitaxial growth of N‐polarity InN films under atomic‐hydrogen irradiation was systematically investigated. It was found that any difference could not be observed in electron concentrations of InN films with and without the atomic‐H irradiation, where typical residual carrier concentrations were from 3 to 5×1018 cm–3. These results suggest that the atomic H may not be an origin of residual donors at least in the InN films with carrier concentrations of 3‐5×1018 cm–3. On the other hand, the atomic‐H irradiation was effective in improving surface morphology of the InN films, which suggested an effect of surfactant on InN epitaxy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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