Abstract
Wurtzite structure InN films were prepared on Si(100) substrates using radio‐frequency metal‐organic molecular beam epitaxy (RF‐MOMBE) system. Ga‐doped ZnO (GZO) and Amorphous AlN (a‐AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X‐ray diffraction (XRD), field emission scanning electron microscopy (FE‐SEM), transmission electron microscopy (TEM), and photoluminescence (PL). XRD results indicated that all InN films exhibited preferred growth orientation along the c‐axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two‐dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.
Highlights
Indium nitride (InN) is a potentially important material for optoelectronic and high speed electronic devices, due to its narrow band gap (
We studied the effect of different buffer layers on the growth of InN by radio-frequency metalorganic molecular-beam epitaxy (RF-MOMBE)
InN films were grown by radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) with Ga-doped ZnO (GZO) layer, amorphous AlN (a-AlN) layer, and direct growth on Si(100) substrate
Summary
Indium nitride (InN) is a potentially important material for optoelectronic and high speed electronic devices, due to its narrow band gap (
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