Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Abstract

In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (tFE) on transfer and RF/analog characteristics such as transconductance (gm), total gate capacitance (Cgg), cut off frequency (ft), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of tFE on linearity figure of merits (FoMs), higher order harmonics (gm2 and gm3), voltage intercept points (VIP2 and VIP3), third order power intercept point (IIP3), third order intermodulation distortion (IMD3), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking tFE as a parameter. The noise spectral densities of Fe-FinFET taking tFE as parameter is also highlighted. The scaling of tFE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of tFE. It is also perceived that linearity and HD parameters are dependent on scaling of tFE. Results reveal that with increase in tFE, RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in tFE value. The increased in tFE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.