Abstract
In this paper, Ga0.6Ge2.8Sb2.6Te4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (~240°C) and larger crystallization activation energy (~2.9eV), which lead to a higher temperature (~135°C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05×105SET–RESET cycles during endurance test.
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