Abstract
Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.
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