Abstract
We have observed visible photo-luminescence (PL) from an oxidized hydrogenated nanocrystalline silicon (nc-Si:H) film which was prepared in a plasma enhanced chemical vapor deposition (PECVD) system and post-treated by thermal oxidization processes. At low oxidization temperature (T ox) below 500 °C, silicon oxyhydrides and silicon oxides are formed at the surface of grains; while at high T ox above 500 °C, the surface of grains is covered by α-SiO 2. PL around 650 nm-750 nm is observed as T ox ranges from 100 °C to 700 °C during which the grain size (d c) varies from 2.7 nm to 5.1 nm. At T ox > 700 °C, the d c is larger than 5.1 nm and PL peak shifts to 920 nm. The quantum size effect and surface states model was employed to explain our experimental results.
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