Abstract
ABSTRACT(Ba0.65Sr0.35)TiO3 (BST) ceramics doped with MgTiO3 were prepared by solid state method. Influence of MgTiO3 doped amount on dielectric property and microstructure of BST ceramics were investigated. The results showed that MgTiO3 doping could fine crystal grain size and made crystal grain size uniform and pore decrease and density increase. MgTiO3 doping could decrease dielectric loss (tanδ) and increase dielectric constant(ϵr) of BST ceramics and increase the alternating current (AC) withstand voltage strength (Eb) and improve the capacitance temperature property. When MgTiO3 doping amount was 0.8wt.%, the BST ceramics had good comprehensive property, ϵr of 4350, tanδ of 0.0055, Eb of 5.7×103 V/mm (AC), the capacitance temperature property was suited for Y5U.
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