Abstract
In this study, we investigated DLC-Si films were deposited by PECVD from C4H10:SiH4:O2 gas mixtures. We aim to investigate the influence of hydrogen on the variation of echanical properties and microstructure of DLC-Si films synthesized by radio frequency plasma chemical vapor deposition (r.f.-PECVD). The DLC films were deposited on a silicon substrate. That the reactant gases employed in this paper are a mixture of composition. The films deposited were studied by atomic force microscope (AFM), Raman and Fourier transform infrared (FT-IR) spectroscopy. The test results show that the ratio of SiH4 in the gas mixture was successively varied to clarify its influence on the roughness, microstructure, hardness, refractive index for the DLC films. The results reveal that the increasing of the concentration of SiH4 increases sp3 ratio, refractive index and roughness. Meanwhile, increasing the SiH4 concentration causes the decrease of hardness. Finally, optic behavior is correlated to the silicon concentration for deposition with SiH4 containing reactant gas.
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