Study on blue and white electroluminescence based on Ga2O3 composite films

Abstract

Diamond/Ga2O3 composite film (DGCF) and diamond/SiO2/Ga2O3 composite film (DSGCF) were prepared on heavy doped n-type silicon substrate by integrating Ga2O3 with diamond and SiO2. DGCF structure electroluminescence (EL) devices use the electron acceleration and local electric field enhancement characteristics of diamond thin film to excite Ga2O3 and obtain blue EL, while DSGCF structure EL devices show brighter and more uniform white EL characteristics due to the introduction of SiO2 layer. The introduction of SiO2 film layer not only introduces the defect energy level related to red light emission of the device, but also improves the green light emission intensity of Ga2O3. In addition, the SiO2 film layer brings a more uniform electron injection to the Ga2O3 film, resulting in a brighter and more uniform white EL.