Abstract
The adhesive strength between a phase change film and electrodes is important for the application of phase change random access memory. The adhesive strength between Ge2Sb2Te5 and various types of electrodes as a function of annealing temperature was investigated using Nano Indenter®. The structural transformation of Ge2Sb2Te5 during annealing was studied by X-ray diffraction. Results show that adhesive strength decreases with an increase in annealing temperature. The adhesive strength between amorphous Ge2Sb2Te5 and electrodes is higher than that between polycrystalline Ge2Sb2Te5 and electrodes, and TiN is a better choice as a heating electrode in the phase change memory application than W and Ti.
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