Abstract
This paper presents the quasi-ballistic electron transport of a symmetric double-gate (DG) nano-MOSFET with 10 nm gate length and implementation of logical NOT transistor circuit using this nano-MOSFET. Theoretical calculation and simulation using NanoMOS have been done to obtain parameters such as ballistic efficiency, backscattering mean free path, backscattering coefficient, critical length, thermal velocity, capacitances, resistance and drain current. NanoMOS is an on-line device simulator. Theoretical and simulated drain current per micro of width is closely matched. Transistor loaded NOT gate is simulated using WinSpice. Theoretical and simulated value of rise time, fall time, propagation delay and maximum signal frequency of logical NOT transistor level circuit is closely matched. Quasi-ballistic transport has been investigated in this paper since modern MOSFET devices operate between the drift-diffusion and ballistic regimes. This paper aims to enable modern semiconductor device engineers to become familiar with both approaches.
Highlights
In traditional semiconductor devices, carriers are frequently scattered from phonons, ionized impurities and surface roughness
Quasi-ballistic transport has been investigated in this paper since modern MOSFET devices operate between the drift-diffusion and ballistic regimes
This paper aims to enable modern semiconductor device engineers to become familiar with both approaches
Summary
Carriers are frequently scattered from phonons, ionized impurities and surface roughness. The backscattering mean free path λ is much shorter than the device channel. Drift-diffusion approach is used to describe the carrier transport. As devices downscale to nanometer regime, backscattering mean free path become comparable to transistor dimensions. When the backscattering mean free path becomes much larger than the transistor channel length, scattering can be totally ignored. In this situation, a nano-MOSFET behaves like a vacuum tube. Modern devices operate in quasi-ballistic mode which is between drift-diffusion and ballistic regimes. Modern device engineer must familiar with both approaches. The nano-MOSFET studied in this paper is applied in implementing logical NOT transistor level circuit [1] [2] [3] [4]
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