Model-comparison study of quasi-ballistic electron transport in nanoscale semiconductor devices

Ting-Wei Tang,Massimo V Fischetti,Seonghoon Jin,Nobuyuki Sano,Il-O Yoon,Young June Park

doi:10.1109/iwce.2010.5677940

Model-comparison study of quasi-ballistic electron transport in nanoscale semiconductor devices

Ting-Wei Tang, Massimo V Fischetti + Show 4 more

https://doi.org/10.1109/iwce.2010.5677940

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Publication Date: Oct 1, 2010

Citations: 7

Affiliation: University of Massachusetts Amherst, University of Tsukuba, Seoul National University

#Relaxation Time Approximation #Virtual Source Model + Show 8 more

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Abstract

We compare two relaxation time approximation (RTA) models of the 1-D Boltzmann transport equation, one of Sano and the other of Gnani et ah. Using an asymmetric parabola to approximate the potential-energy profile, we determine semi-analytically the distribution function at the virtual source (VS). We consider three different forms of energy dependence of the relaxation time (RT). The backscattering coefficient and ballistic efficiency are calculated and compared for each RTA model. We find that the VS model is strictly applicable only to the case of a constant mean-free-path.

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