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Abstract
Intel's microprocessors are powered by high-frequency fully-integrated switching regulators implemented on die. Current products use non-magnetic inductors designed in the package substrate. This article investigates the use of magnetic thin film inductors fabricated on silicon wafers as an alternative that improves conversion efficiency while achieving higher inductance per area density. This article builds on the earlier work done on thin film inductors at Intel, and explores the feasibility of using them in a high volume product. A number of different design variations are studied to look at tradeoffs between efficiency, saturation characteristics, transient response, and voltage ripple. This is accomplished through a combination of passive measurements using a vector network analyzer (VNA) and active measurements on a fully functioning integrated voltage regulator system.
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