Abstract
In this research, the formation processes of CuBi2O4 films were examined using atomic force microscopy, energy dispersive analysis and X-ray diffraction analysis methods. The films were synthesized through electrochemical deposition from sulfuric acid solutions at a potential difference of 3.5 V. The duration of film growth was set to between 10 and 90 min to assess the possibility of controlled film growth and preserve the stability of their structural properties during growth over an extended period. An analysis of the data obtained by X-ray diffraction revealed that the resulting film samples are highly ordered structures with a tetragonal CuBi2O4 phase. The results of the connection between the thickness of CuBi2O4 films and strength properties depending on the time of film deposition were obtained. The results of the shielding efficiency of low-energy γ-quanta using CuBi2O4 films were obtained.
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