Abstract
The structure, stoichiometry, and integrity of 3000-Å silicon nitride films on Si(100) substrates were studied using MeV ion channeling. The silicon nitride film was found to be slightly Si rich with a stoichiometry of Si3 N3.6 . The Si substrate contained a thin region (∼7 ML) of disordered Si atoms located immediately below the silicon nitride film.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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