Abstract
In this study, the Process and Inserted nano Ag particles are designed to deposit Gallium-doped ZnO (GZO) thin film and apply on pulse sensor. 300nm GZO thin films had been deposited on a flexible (PC) substrate by radio frequency (RF) sputtering. Intermittence process is designed to improve the quality of the GZO thin film. In order to increase the mobility of carriers, the Cu electrode is used in this process. Another process is to insert the nano Ag particles in GZO thin film without Cu electrode, due to the Ag material has excellent conductive. Two processes of thin film are compared with the change rate of resistivity and mobility after different loading test treatment. As the result, the higher and more stable sensitive of resistance change rate is the process of GZO layer after intermittence process, which has the lowest resistance is 9.98×10−3Ω-cm at IN1 treatment, after the Cu electrode is treated to assistance as device, which is proven to have better use on plus sensor now.
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