Abstract
Highly transparent Gallium doped ZnO (GZO) thin films with different ratios of Gallium were synthesized by sol-gel process and dip coating technique. Concentration of the used solutions for dip coating was 0.09 M. Morphological investigations were done on GZO thin films with 0, 0.5, 1 and 2 at. % gallium content. Influences of doping ratio and post-annealing temperature on optical and electrical properties of the films were also studied. It was found that the film prepared from the solution containing 2 at. % Ga had improved structural properties, less electrical resistivity and biggest optical transmittance. The thickness dependence of the band gap of 2 at. % GZO thin films was also examined. Effect of Cs2CO3 nanolayer and ZnO thin film deposited on 2 at. % GZO thin film was studied. SEM images exhibited island features on the surface of GZO/Cs2CO3 bilayer.
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