Abstract
Non-doped Czochralski grown silicon substrates for microelectronic devices contain relatively high oxygen concentrations (5 × 10 17–10 18 atoms/cm 3). Reduction of the oxygen content near the crystal surface is obtained by internal gettering treatments. Ion channeling and charged particle activation analysis (CPAA) were combined to determine the concentration and position of oxygen atoms in the silicon lattice. The influence of the internal gettering treatment parameters on concentration and position of oxygen atoms in the silicon lattice has been investigated. The 16O( 3He,p) 18F nuclear reaction was used and the 18F yield was measured by direct gamma-ray spectrometry.
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