Abstract
Layers grown by magnetron deposition of Si and SiO2 on a ptype silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation preceding hightemper� ature annealing that results in the formation of Si nanocrystals in the SiO2 matrix on the layer-substrate inter� face characteristics is studied. The density of fast interface states trapping majority carriers was estimated. It is found that structural changes occur at the layer-substrate interface in the case of a (111) substrate and are caused by stresses appearing upon cooling. It was shown that natural oxidation of the deposited layer, preced� ing hightemperature annealing, causes an in crease in the charge trapped in the oxide.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call