Abstract
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.
Highlights
Hafnium-based oxides are recently considered as promising candidates as the high-k dielectric for III-V channel devices.[1,2,3,4,5,6] The HfO2/InGaAs interface, which affects the power consumption of complementary metal-oxide-semiconductor (CMOS), has been greatly improved recently.[7,8] The reactions between the metal electrode and the oxide layer may lead to the degeneration of the oxide layer
To prevent these interface reactions, the multilayer metal alloy of TiNi was used as the gate electrode for the HfO2/InGaAs metal oxide semiconductor capacitor (MOSCAP).[9]
The MOSCAP was fabricated on the 100-nm epitaxial In0.53Ga0.47As layer (5 × 1017/cm[3] Sidoped n-type wafer) which was grown on the n+-InP substrate (using molecular beam epitaxial (MBE) growth technique)
Summary
Hafnium-based oxides are recently considered as promising candidates as the high-k dielectric for III-V channel devices.[1,2,3,4,5,6] The HfO2/InGaAs interface, which affects the power consumption of complementary metal-oxide-semiconductor (CMOS), has been greatly improved recently.[7,8] The reactions between the metal electrode and the oxide layer may lead to the degeneration of the oxide layer. The oxygen segregation at the (Mo, Ni, Pd)/HfO2 interfaces of the HfO2/AlN/InGaAs MOSCAP is investigated.
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