Abstract
The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9·10-2-6.3·101 μm-1 less than 0.3 nm for the main cuts monocrystalline silicon <100>, <110> and <111>. Keywords: sputtering yield, roughness, single-crystalline, monocrystalline, accelerated ions.
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