Study of the influence of electronic radiation on the surface, structure and Raman spectrum of a TlInS2 single crystal

Abstract

The effect of electrons on the surface, Raman spectra, structure and phase transition in a TlInS2 single crystal was studied. Irradiation of TlInS2 with electrons with an energy of 2 MeV and a fluency of 2 × 1017 electron/cm2 leads to an increase in the height of the bump and its width on the sample surface. Radiation treatment of TlInS2 with electrons indicates the appearance of new peaks at 204 cm−1, 224 cm−1 in the Raman spectra and stimulates the formation of a single-phase state with a hexagonal structure (space group P63/mmc).