Abstract
In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
