Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP∕InGaAsP heterostructures

Abstract

The evolution of line edge roughness and sidewall roughness was monitored during the fabrication of deep-etched optical waveguides in InP∕InGaAsP heterostructures. Scanning electron microscopy was used to extract line edge profiles of the electron beam exposed resist and the lifted-off NiCr metal mask. Atomic force microscopy with an ultrasharp tip was utilized to extract the sidewall profiles of InP∕InGaAsP mesa waveguides that were etched using inductively coupled plasma reactive ion etching. The processing step that critically influences the roughness of the etched waveguides was determined by studying the evolution of the roughness.