Abstract
The influence of electrical stress on the behavior of traps at SiC-SiO2 interface are studied by inelastic electron tunneling spectroscopy (IETS). Measured IETS demonstrate the characteristic vibration modes contributed from defects at both metal-oxide and SiC-SiO2 interface. The observed distinct peaks in IETS provide unambiguous evidence to the existence of disordered carbon cluster at SiC-SiO2 interface. By performing bias-dependent IETS measurement, trap-assisted electron tunneling and charge-trapping process were observed and the defect level were determined for SiC-SiO2 interface. Moreover, the influence of electrical stress on the IETS peak-valley intensity and position was investigated and its origination was discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
