Abstract
SnO2-p/n-Si thin film solar cells were prepared by a vacuum evaporation technique, and SnO2 studied as a transparent antireflection coating with the n-type sili- con wafer to fabricate a thin film. The oxidation of the Si surface takes place simultaneously with the evaporation process. Dark forward and reverse I-V characteristics for the SnO2-p/n-Si structure in the temperature range (25- 300 ◦ C), for a thickness of 5000 u A are measured. The illuminated current-voltage characteristics of a PN junction solar cell have been investigated. The capacitance-voltage (C-V) measurements at room temperature are carried out to show the variation of capacitance with frequency. The rela- tive IQE for the fabricated SnO2-p/n-Si structure with 5000 u A thickness at 300 ◦ C are calculated. The fabricated struc- ture has a maximum response at a wavelength in the range, 0.8-1.05μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
