Abstract
We present the novel use of spectroscopic ellipsometry (SE) for the development of a-Si:H solar cell. SE is a very fast and useful tool to measure various optical properties of thin film. In the case of a-Si:H thin film analysis, generally, SE is used to estimate the film thickness, roughness, void fraction, optical constants such as ( n, k), and so forth. In this study, optical parameters from SE measurements were analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell. By analyzing IR absorption spectra and conductivity measurements, it was affirmed that < ε 2> and parameter A by Tauc–Lorentz model fitting of SE data are representative parameters qualifying a-Si:H thin film, and that they have close relationships with FF and light induced degradation property of solar cells. Based on the analysis, solar cells that have i-layers with various E g were optimized. By this research, easier and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements was established.
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