Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

V G Tikhomirov,N A Maleev,A G Gladyshev,A G Kuzmenkov,V M Ustinov,M M Kulagina,V E Zemlyakov,V B Yankevich,Yu V Solov’Ev,A V Bobyl,K V Dudinov

doi:10.1134/s1063782611100216

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

V G Tikhomirov, N A Maleev + Show 9 more

https://doi.org/10.1134/s1063782611100216

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Journal: Semiconductors	Publication Date: Oct 1, 2011
Citations: 5

Affiliation: Ioffe Institute, Saint Petersburg Academic University, Saint Petersburg State Electrotechnical University

#Characteristics Of Field-effect Transistors #Characteristics Of Transistors + Show 8 more

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Abstract

The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.

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