Abstract
The capacitance and voltage characteristics of field effect transistors passivated by BaF2-B2O3-GeO2-SiO2 glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresisC-V curve shifts was seen. The water content is related to the fluoride content of the BaF2−B2O3−GeO2−SiO2 glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay's equation. The source-drain current and voltage (I-V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.
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