Abstract
Auger electron spectroscopy and Raman spectroscopy were used to study a GaSe-SiO2 structure before and after irradiation with 4.0-MeV electrons at a dose of 3.0×1015 cm−2. It was shown that after the irradiation the thickness of the transition region in the GaSe-SiO2 structure decreases, while the oxide film becomes more homogenous. One of the possible causes of these changes may be radiation-stimulated gettering of Ga atoms by the GaSe-SiO2 interface that serves as a sink.
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