Abstract
Semeconductor compounds with is ovalent impurities, effect of bismuth electrophysical properties, processing into a growing crystal, electrical properties of Ga P, mobility of crystals , the interaction of bismuth with silicon
Highlights
As it is known [1.2], doping of A3B5 semiconductor compounds with isovalent impurities (IVP) significantly affects the properties of these materials, and the IVP can interact with background impurities, which is of interest for solving the most important problem of physics and technology of semiconductors reducing the residual impurity background in crystals
In this work, using the example of bismuth-doped single crystals of GaP and obtained by the Czochralski method, the possibility of using the interaction of impurity atoms in the liquid phase is shown, as a result of which a smaller amount of background impurity gets into the growing crystal
An increase in the layer thickness leads to a decrease in its strength and makes it difficult to visually observe the appearance of primary crystals: and a decrease leads to an increase in the evaporation of volatile components
Summary
As it is known [1.2], doping of A3B5 semiconductor compounds with isovalent impurities (IVP) significantly affects the properties of these materials, and the IVP can interact with background impurities, which is of interest for solving the most important problem of physics and technology of semiconductors reducing the residual impurity background in crystals. 2 15 0 0 0 * * (2) 0,0176 * 1, 44 * 10 uuou AWWWARW kWt A A solar cell is a set of photocells that is a means of converting light energy into electricity.
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