Abstract
Interface properties of Al/SiO2 /Si MOS structures with NAOS oxide layer were analyzed by the construction of the capacitance-voltage model with the interface states. Energy distributions associated with the localized states in silicon band gap were modeled by the Gaussian distribution. Energy levels of localized states and the densities of interface states were determined. The results correspond with the results of the interface states study performed by the acoustic deep-level transient spectroscopy.
Highlights
High quality ultrathin SiO2 layers with unique structural and electrical properties were prepared on n-type silicon substrate by the nitric acid oxidation of silicon method (NAOS) [1,2,3]
Density of interface states in MOS structure with ultrathin NAOS SiO2 layer was determined by the capacitance-voltage measurements at various frequencies
Theoretical model of C–V curves is based on computation of equivalent capacitance of MOS structure corresponding to the density of interface states
Summary
High quality ultrathin SiO2 layers with unique structural and electrical properties were prepared on n-type silicon substrate by the nitric acid oxidation of silicon method (NAOS) [1,2,3]. The interfacial properties between silicon and SiO2 layer severely impact the carrier mobility and influence the electrical properties of the structure. Chemical impurities or defects in periodical crystal lattice structure of silicon create the perturbations of the lattice. The periodicity of crystal lattice is important for the band structure properties. Many defects cause bound states in the energy band gaps of a given crystal. Defect states in the band gap influence the properties of the semiconductor by modifying the mobility of charge carriers and by acting like donors or acceptors. On a superposition of several types of energy distributions describing the density of interface states which enables computation of the frequency response of these interface states
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