Abstract
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O/(Ar+O) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.
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