Abstract
Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were prepared using the facing targets sputtering (FTS) method as a function of input power at room temperature. The a-IGZO films were used a channel layer for thin film transistors (TFTs). The electrical, optical, and structural properties of a-IGZO thin films were measured by Hall Effect measurement, UV/vis spectrometer and X-ray diffractometer. The performance and device characteristics of the a-IGZO TFTs were measured by using a semiconductor parameter analyzer. The transfer characteristics of a-IGZO TFTs exhibited saturation mobility of 10.83 cm 2/V s and threshold voltage of 5.13 V.
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